1SV279,H3F
603
1SV279,H3F
Tape & Reel (TR)
PB-F ESC VARICAP DIODE (HF), IR=
$0.09202
Total Price: $ 0.09202
In Stock: 0
Share
Please send RFQ , we will respond immediately.
Purchase and inquiry
- User guide
- Purchase & Inquiry
- Transport
1SV279,H3Finformation
- Specifications
Toshiba Semiconductor and Storage. 1SV279,H3F technical specifications,attributes, parameters and parts with similarspecifications to Toshiba Semiconductor and Storage. 1SV279,H3F.
Download datasheets and manufacturer documentation for Toshiba Semiconductor and Storage. 1SV279,H3F.
- Datasheets :
1SV279,H3FRelevant information
- Hot Sale
- Parts with Similar Specs
- Popular Search
-
MPV21010-206/TR
Microchip Technology -
LV2209
onsemi -
BB131,115
NXP Semiconductors -
BB55502VH7912XTSA1
Infineon Technologies -
HVD396CKRF-E
Renesas -
BB545E7904HTSA1
Infineon Technologies -
HVD355BKRF-E
Renesas -
BB66402VH7902XTSA1
Infineon Technologies -
BB659C02VH7912XTSA1
Infineon Technologies -
BB202
NXP USA Inc.
The three parts on the right have similar specifications to Toshiba Semiconductor and Storage. & 1SV279,H3F.
- Part Number
- Manufacturer
- Package
- Description
-
MPV21010-206/TR
Microchip Technology
SI TVAR NON HERMETIC MMSM
-
LV2209
onsemi
VARIABLE CAPACITANCE DIODE, 33PF
-
BB131,115
NXP Semiconductors
VHF VARIABLE CAPACITANCE DIODE
-
BB55502VH7912XTSA1
Infineon Technologies
BB555 - VARIABLE CAPACITANCE DIO
-
HVD396CKRF-E
Renesas
HVD396 - VARIABLE CAPACITANCE DI
-
BB545E7904HTSA1
Infineon Technologies
BB545 - SILICON VARIABLE CAPCITA
-
HVD355BKRF-E
Renesas
HVD355 - VARIABLE CAPACITANCE DI
-
BB66402VH7902XTSA1
Infineon Technologies
BB664 - VARIABLE CAPACITANCE DIO
-
BB659C02VH7912XTSA1
Infineon Technologies
BB659 - VARIABLE CAPACITANCE DIO
-
BB202
NXP USA Inc.
VARIABLE CAPACITANCE DIODE, SILI
The following parts are popular search parts in 1SV279,H3F.
